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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTA113EMB,315
NXP USA Inc.

PDTA113EMB,315

Manufacturer Part Number PDTA113EMB,315
Manufacturer NXP USA Inc.
Detailed Description NOW NEXPERIA PDTA113EMB - SMALL
Package DFN1006B-3
In Stock 2751993 pcs
Data sheet
Reference Price (In US Dollars)
11871
$0.012
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 1.5mA, 30mA
Transistor Type PNP - Pre-Biased
Supplier Device Package DFN1006B-3
Series -
Resistor - Emitter Base (R2) 1 kOhms
Resistor - Base (R1) 1 kOhms
Power - Max 250 mW
Product Attribute Attribute Value
Package / Case SC-101, SOT-883
Package Bulk
Mounting Type Surface Mount
Frequency - Transition 180 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 40mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100 mA
Base Product Number PDTA113

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PDTA113EMB,315 Datasheet PDF

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