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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > PBSS8110S,126
NXP Semiconductors / Freescale

PBSS8110S,126

Manufacturer Part Number PBSS8110S,126
Manufacturer NXP Semiconductors / Freescale
Detailed Description TRANS NPN 100V 1A TO92
Package TO-92-3
In Stock 4355 pcs
Data sheet PBSS8110S
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Transistor Type NPN
Supplier Device Package TO-92-3
Series -
Power - Max 830mW
Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names 934057671126
PBSS8110S AMO
PBSS8110S AMO-ND
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 250mA, 10V
Current - Collector Cutoff (Max) 100nA
Current - Collector (Ic) (Max) 1A
Base Part Number PBSS8110

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PBSS8110S,126 Datasheet PDF

Data sheet