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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > PBSS4230PAN,115
NXP Semiconductors

PBSS4230PAN,115

Manufacturer Part Number PBSS4230PAN,115
Manufacturer NXP Semiconductors
Detailed Description NOW NEXPERIA PBSS4230PAN - SMALL
Package 6-HUSON-EP (2x2)
In Stock 4983 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A
Transistor Type -
Supplier Device Package 6-HUSON-EP (2x2)
Series -
Power - Max 510mW
Package / Case 6-UDFN Exposed Pad
Package Bulk
Product Attribute Attribute Value
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Frequency - Transition 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 2A
Base Product Number PBSS4230

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PBSS4230PAN,115 Datasheet PDF

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