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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BUK9Y59-60E,115
NXP USA Inc.

BUK9Y59-60E,115

Manufacturer Part Number BUK9Y59-60E,115
Manufacturer NXP USA Inc.
Detailed Description N-CHANNEL 60 V, 59 MILLI OHMS LO
Package LFPAK56, Power-SO8
In Stock 3982 pcs
Data sheet BUK9Y59-60E
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.1V @ 1mA
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
Supplier Device Package LFPAK56, Power-SO8
Series Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 10V
Power Dissipation (Max) 37W (Tc)
Package / Case SC-100, SOT-669
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 16.7A (Tc)

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BUK9Y59-60E,115 Datasheet PDF

Data sheet

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