RFD12N06RLESM9A
| Manufacturer Part Number | RFD12N06RLESM9A |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Detailed Description | POWER FIELD-EFFECT TRANSISTOR, 1 |
| Package | TO-252, (D-Pak) |
| In Stock | 5766 pcs |
| Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-252, (D-Pak) |
| Series | UltraFET™ |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 18A, 10V |
| Power Dissipation (Max) | 49W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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