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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFW640BTM
Fairchild Semiconductor

IRFW640BTM

Manufacturer Part Number IRFW640BTM
Manufacturer Fairchild Semiconductor
Detailed Description N-CHANNEL POWER MOSFET
Package D2PAK (TO-263)
In Stock 6167 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D2PAK (TO-263)
Series -
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 10V
Power Dissipation (Max) 3.13W (Ta)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)

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IRFW640BTM Datasheet PDF