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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGL35N120FTDTU
Fairchild Semiconductor

FGL35N120FTDTU

Manufacturer Part Number FGL35N120FTDTU
Manufacturer Fairchild Semiconductor
Detailed Description INSULATED GATE BIPOLAR TRANSISTO
Package HPM F2
In Stock 19983 pcs
Data sheet
Reference Price (In US Dollars)
50
$2.242
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 35A
Test Condition 600V, 35A, 10Ohm, 15V
Td (on/off) @ 25°C 34ns/172ns
Switching Energy 2.5mJ (on), 1.7mJ (off)
Supplier Device Package HPM F2
Series -
Reverse Recovery Time (trr) 337 ns
Power - Max 368 W
Product Attribute Attribute Value
Package / Case TO-264-3, TO-264AA
Package Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Type Standard
IGBT Type Trench Field Stop
Gate Charge 210 nC
Current - Collector Pulsed (Icm) 105 A
Current - Collector (Ic) (Max) 70 A

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FGL35N120FTDTU Datasheet PDF