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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MIMD10A-7-F
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MIMD10A-7-F

Manufacturer Part Number MIMD10A-7-F
Manufacturer Diodes Incorporated
Detailed Description TRANS PREBIAS NPN/PNP SOT363
Package SOT-363
In Stock 6060 pcs
Data sheet Mult Dev EOL 15/Mar/2021Green Encapsulate Change 09/July/2007Diodes Environmental Compliance CertMult Dev A/T Chg 5/Apr/2021
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-363
Series -
Resistor - Emitter Base (R2) 10kOhms
Resistor - Base (R1) 100Ohms, 10kOhms
Power - Max 200mW
Product Attribute Attribute Value
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA, 500mA
Base Product Number MIMD10

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MIMD10A-7-F Datasheet PDF

Data sheet

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