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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HBDM60V600W-7
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HBDM60V600W-7

Manufacturer Part Number HBDM60V600W-7
Manufacturer Diodes Incorporated
Detailed Description TRANS NPN/PNP 65V/60V SOT363
Package SOT-363
In Stock 5996 pcs
Data sheet Bond Wire 16/Sept/2008Mult Dev Assembly Chgs 5/May/2020Diodes Environmental Compliance CertHBDM60V600W ~
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 65V, 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Transistor Type NPN, PNP
Supplier Device Package SOT-363
Series -
Power - Max 200mW
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Frequency - Transition 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 100nA
Current - Collector (Ic) (Max) 500mA, 600mA
Base Product Number HBDM60V600

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HBDM60V600W-7 Datasheet PDF

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