DMJ65H650SCTI
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
ITO-220AB (Type TH)
Series
-
Rds On (Max) @ Id, Vgs
600mOhm @ 2.4A, 10V
Power Dissipation (Max)
31W (Tc)
Package / Case
TO-220-3 Full Pack, Isolated Tab
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
639 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
12.9 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Base Product Number
DMJ65
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DMJ65H650SCTI Datasheet PDF
Data sheet
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