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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMG4N60SJ3
Diodes Incorporated

DMG4N60SJ3

Manufacturer Part Number DMG4N60SJ3
Manufacturer Diodes Incorporated
Detailed Description MOSFET N-CH 600V 3A TO251
Package TO-251
In Stock 3846 pcs
Data sheet DMG4N60SJ3Diodes Environmental Compliance CertMult Devices EOL 05/Feb/2019
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-251
Series -
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Power Dissipation (Max) 41W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 532 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Base Product Number DMG4

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DMG4N60SJ3 Datasheet PDF

Data sheet