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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DDTD114GC-7-F
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DDTD114GC-7-F

Manufacturer Part Number DDTD114GC-7-F
Manufacturer Diodes Incorporated
Detailed Description TRANS PREBIAS NPN 200MW SOT23-3
Package SOT-23-3
In Stock 5345 pcs
Data sheet Mult Dev EOL 15/Mar/2021Green Encapsulate 15/May/2008Bond Wire 11/Nov/2011Mult Dev A/T Site 31/Mar/2021Diodes Environmental Compliance CertDDTD (zzzz) C
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-23-3
Series -
Resistor - Emitter Base (R2) 10 kOhms
Power - Max 200 mW
Package / Case TO-236-3, SC-59, SOT-23-3
Product Attribute Attribute Value
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 200 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO)
Current - Collector (Ic) (Max) 500 mA
Base Product Number DDTD114

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DDTD114GC-7-F Datasheet PDF

Data sheet