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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPP80N06S209
Infineon Technologies

SPP80N06S209

Manufacturer Part Number SPP80N06S209
Manufacturer Infineon Technologies
Detailed Description N-CHANNEL POWER MOSFET
Package PG-TO220-3-1
In Stock 138860 pcs
Data sheet
Reference Price (In US Dollars)
400
$0.268
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 125µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO220-3-1
Series OptiMOS™
Rds On (Max) @ Id, Vgs 9.1mOhm @ 50A, 10V
Power Dissipation (Max) 190W (Tc)
Package / Case TO-220-3
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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SPP80N06S209 Datasheet PDF

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