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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPI07N65C3XKSA1
Infineon Technologies

SPI07N65C3XKSA1

Manufacturer Part Number SPI07N65C3XKSA1
Manufacturer Infineon Technologies
Detailed Description N-CHANNEL POWER MOSFET
Package PG-TO262-3-1
In Stock 103737 pcs
Data sheet
Reference Price (In US Dollars)
335
$0.327
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.9V @ 350µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3-1
Series CoolMOS™
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Power Dissipation (Max) 83W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)

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SPI07N65C3XKSA1 Datasheet PDF

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