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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPD35N10
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SPD35N10

Manufacturer Part Number SPD35N10
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 35A TO252-3
Package PG-TO252-3
In Stock 5092 pcs
Data sheet SPD35N10Part Number GuideMultiple Devices 22/Feb/2008
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id -
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series SIPMOS®
Rds On (Max) @ Id, Vgs 44mOhm @ 26.4A, 10V
Power Dissipation (Max) 150W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Base Product Number SPD35N

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SPD35N10 Datasheet PDF

Data sheet

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