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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 21µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO263-3-2
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
154mOhm @ 8.1A, 10V
Power Dissipation (Max)
50W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
444 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Base Product Number
SPB10N
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