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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > SIDC30D120E6X1SA2
Infineon Technologies

SIDC30D120E6X1SA2

Manufacturer Part Number SIDC30D120E6X1SA2
Manufacturer Infineon Technologies
Detailed Description DIODE GP 1.2KV 35A WAFER
Package Sawn on foil
In Stock 5946 pcs
Data sheet Part Number Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 35 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology Standard
Supplier Device Package Sawn on foil
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Package / Case Die
Product Attribute Attribute Value
Package Bulk
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 27 µA @ 1200 V
Current - Average Rectified (Io) 35A
Capacitance @ Vr, F -
Base Product Number SIDC30D

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SIDC30D120E6X1SA2 Datasheet PDF

Data sheet

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