IRLI530N
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±16V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO220-FP
Series
HEXFET®
Rds On (Max) @ Id, Vgs
100mOhm @ 9A, 10V
Power Dissipation (Max)
41W (Tc)
Package / Case
TO-220-3 Full Pack
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
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Data sheet
Datasheet File Browse
