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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRLB3036GPBF
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IRLB3036GPBF

Manufacturer Part Number IRLB3036GPBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 60V 195A TO220AB
Package TO-220AB
In Stock 5762 pcs
Data sheet IRLB3036GPbFPart Number GuideMosfet Backend Wafer Processing 23/Oct/2013Multiple Devices 05/Nov/2013
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 2.4mOhm @ 165A, 10V
Power Dissipation (Max) 380W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 11210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)

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IRLB3036GPBF Datasheet PDF

Data sheet

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