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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±16V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D2PAK
Series
HEXFET®
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Power Dissipation (Max)
3.8W (Ta), 180W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
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IRL2203NPBFHEXFET POWER MOSFETInternational Rectifier