IRFU3410PBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
10000
$0.543
$0.487
$0.38
$0.314
$0.248
$0.231
$0.22
$0.211
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
IPAK (TO-251AA)
Series
HEXFET®
Rds On (Max) @ Id, Vgs
39mOhm @ 18A, 10V
Power Dissipation (Max)
3W (Ta), 110W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Base Product Number
IRFU3410
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IRFU3410PBF Datasheet PDF
Data sheet
Datasheet File Browse
