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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
IPAK (TO-251AA)
Series
HEXFET®
Rds On (Max) @ Id, Vgs
27mOhm @ 26A, 10V
Power Dissipation (Max)
107W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
44A (Tc)
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