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IRFS59N10DTRRP
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5.5V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D2PAK
Series
HEXFET®
Rds On (Max) @ Id, Vgs
25mOhm @ 35.4A, 10V
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
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IRFS59N10DTRRP Datasheet PDF
Data sheet
Datasheet File Browse
