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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 100µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB Full-Pak
Series
HEXFET®
Rds On (Max) @ Id, Vgs
13.5mOhm @ 21A, 10V
Power Dissipation (Max)
42W (Tc)
Package / Case
TO-220-3 Full Pack
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
2998 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
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IRFI4228PBF-IRHEXFET N-CHANNEL POWER MOSFETInternational Rectifier
