IRFH7110TRPBF
| Manufacturer Part Number | IRFH7110TRPBF |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CH 100V 11A/58A 8PQFN |
| Package | 8-PQFN (5x6) |
| In Stock | 5679 pcs |
| Data sheet | IRFH7110PbFMult Dev Label Chgs 18/Feb/2020Mosfet Backend Wafer Processing 23/Oct/2013Mult Dev No Format/Barcode Label 15/Jan/2019Package Drawing Update 19/Aug/2015Mult Devices EOL 08/May/2019 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-PQFN (5x6) |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 35A, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Package / Case | 8-TQFN Exposed Pad |
| Package | Tape & Reel (TR) |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |
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