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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFH5110TRPBF
Infineon Technologies

IRFH5110TRPBF

Manufacturer Part Number IRFH5110TRPBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 11A/63A 8PQFN
Package 8-PQFN (5x6)
In Stock 6185 pcs
Data sheet Mult Dev Lot Chgs 25/May/2021Mult Dev Label Chgs Aug/2020Mosfet Backend Wafer Processing 23/Oct/2013PQFN 5x6 RoHS CompliancePackage Drawing Update 19/Aug/2015Mult Dev EOL 9/Nov/2022
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 100µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-PQFN (5x6)
Series HEXFET®
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V
Power Dissipation (Max) 3.6W (Ta), 114W (Tc)
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3152 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 63A (Tc)
Base Product Number IRFH5110

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IRFH5110TRPBF Datasheet PDF

Data sheet