IRFH4210TRPBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.1V @ 100µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PQFN (5x6)
Series
HEXFET®
Rds On (Max) @ Id, Vgs
1.35mOhm @ 50A, 10V
Power Dissipation (Max)
3.6W (Ta), 104W (Tc)
Package / Case
8-PowerTDFN
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
4812 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
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IRFH4210TRPBF Datasheet PDF
Data sheet
Datasheet File Browse