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IRF9910TRPBF-1
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.55V @ 250µA
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SOIC
Series
HEXFET®
Rds On (Max) @ Id, Vgs
13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Power - Max
2W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V, 1860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V, 23nC @ 4.5V
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 12A (Ta)
Configuration
2 N-Channel (Dual)
Base Product Number
IRF99
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IRF9910TRPBF-1 Datasheet PDF
Data sheet
Datasheet File Browse