IRF7779L2TRPBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
$2.622
$2.354
$1.929
$1.642
$1.385
$1.316
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
DirectFET™ Isometric L8
Series
HEXFET®
Rds On (Max) @ Id, Vgs
11mOhm @ 40A, 10V
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
Package / Case
DirectFET™ Isometric L8
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Base Product Number
IRF7779
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IRF7779L2TRPBF Datasheet PDF
Data sheet
Datasheet File Browse
