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IRF7701GTRPBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.2V @ 250µA
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-TSSOP
Series
HEXFET®
Rds On (Max) @ Id, Vgs
11mOhm @ 10A, 4.5V
Power Dissipation (Max)
1.5W (Ta)
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
5050 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 4.5 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
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IRF7701GTRPBF Datasheet PDF
Data sheet
Datasheet File Browse