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IRF7420
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
900mV @ 250µA
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
HEXFET®
Rds On (Max) @ Id, Vgs
14mOhm @ 11.5A, 4.5V
Power Dissipation (Max)
2.5W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
3529 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 4.5 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
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Data sheet
Datasheet File Browse