IRF6729MTR1PBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.35V @ 150µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
DIRECTFET™ MX
Series
HEXFET®
Rds On (Max) @ Id, Vgs
1.8mOhm @ 31A, 10V
Power Dissipation (Max)
2.8W (Ta), 104W (Tc)
Package / Case
DirectFET™ Isometric MX
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
6030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 190A (Tc)
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IRF6729MTR1PBF Datasheet PDF
Data sheet
Datasheet File Browse