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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6641TR1PBF
Infineon Technologies

IRF6641TR1PBF

Manufacturer Part Number IRF6641TR1PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 200V 4.6A DIRECTFET
Package DIRECTFET™ MZ
In Stock 5623 pcs
Data sheet Multiple Devices 20/Dec/2013Backend Wafer Transfer 23/Oct/2013IR Part Numbering SystemMSL Update 20/Feb/2014
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.9V @ 150µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package DIRECTFET™ MZ
Series HEXFET®
Rds On (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Package / Case DirectFET™ Isometric MZ
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 26A (Tc)

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IRF6641TR1PBF Datasheet PDF

Data sheet