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IRF640NPBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
10000
$0.556
$0.498
$0.388
$0.321
$0.253
$0.236
$0.224
$0.216
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Series
HEXFET®
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Power Dissipation (Max)
150W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Base Product Number
IRF640
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Data sheet
Datasheet File Browse
