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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF630NL
Infineon Technologies

IRF630NL

Manufacturer Part Number IRF630NL
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 200V 9.3A TO262
Package TO-262
In Stock 5239 pcs
Data sheet IRF630N(S,L)IR Part Numbering SystemEOL122B 02/Oct/2007
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262
Series HEXFET®
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V
Power Dissipation (Max) 82W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)

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IRF630NL Datasheet PDF

Data sheet

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