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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPW50R199CP
Infineon Technologies

IPW50R199CP

Manufacturer Part Number IPW50R199CP
Manufacturer Infineon Technologies
Detailed Description N-CHANNEL POWER MOSFET
Package PG-TO247-3-21
In Stock 6238 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 660µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO247-3-21
Series CoolMOS™
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Power Dissipation (Max) 139W (Tc)
Package / Case TO-247-3
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)

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IPW50R199CP Datasheet PDF