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IPU10N03LA
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 20µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
P-TO251-3-1
Series
OptiMOS™
Rds On (Max) @ Id, Vgs
10.4mOhm @ 30A, 10V
Power Dissipation (Max)
52W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1358 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Base Product Number
IPU10N
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Data sheet
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