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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPS80R900P7AKMA1
Infineon Technologies

IPS80R900P7AKMA1

Manufacturer Part Number IPS80R900P7AKMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 800V 6A TO251-3
Package PG-TO251-3
In Stock 119392 pcs
Data sheet Mult Dev Supplier Chg 19/Jan/2022
Reference Price (In US Dollars)
1500
$0.283
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 110µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO251-3
Series CoolMOS™ P7
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
Power Dissipation (Max) 45W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Base Product Number IPS80R900

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IPS80R900P7AKMA1 Datasheet PDF

Data sheet