IPS65R1K4C6
Manufacturer Part Number | IPS65R1K4C6 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 650V 3.2A TO251-3 |
Package | PG-TO251-3 |
In Stock | 6166 pcs |
Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 100µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO251-3 |
Series | CoolMOS™ C6 |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
Power Dissipation (Max) | 28W (Tc) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
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