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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPS12CN10LGBKMA1
Infineon Technologies

IPS12CN10LGBKMA1

Manufacturer Part Number IPS12CN10LGBKMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 69A TO251-3
Package PG-TO251-3-11
In Stock 5763 pcs
Data sheet Part Number GuideMultiple Devices 26/Jul/2012
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.4V @ 83µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO251-3-11
Series OptiMOS™
Rds On (Max) @ Id, Vgs 11.8mOhm @ 69A, 10V
Power Dissipation (Max) 125W (Tc)
Package / Case TO-251-3 Stub Leads, IPak
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Base Product Number IPS12C

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IPS12CN10LGBKMA1 Datasheet PDF

Data sheet