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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPS050N03LG
Infineon Technologies

IPS050N03LG

Manufacturer Part Number IPS050N03LG
Manufacturer Infineon Technologies
Detailed Description N-CHANNEL POWER MOSFET
Package PG-TO252-3
In Stock 374509 pcs
Data sheet
Reference Price (In US Dollars)
1500
$0.102
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS®
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V
Power Dissipation (Max) 68W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)

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IPS050N03LG Datasheet PDF

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