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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP80N06S209AKSA1
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IPP80N06S209AKSA1

Manufacturer Part Number IPP80N06S209AKSA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 55V 80A TO220-3
Package PG-TO220-3-1
In Stock 3961 pcs
Data sheet Part Number GuideMult Dev Wafer Fab 12/Feb/2019
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 125µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO220-3-1
Series OptiMOS™
Rds On (Max) @ Id, Vgs 9.1mOhm @ 50A, 10V
Power Dissipation (Max) 190W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Base Product Number IPP80N

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IPP80N06S209AKSA1 Datasheet PDF

Data sheet

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