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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP024N06N3G
Infineon Technologies

IPP024N06N3G

Manufacturer Part Number IPP024N06N3G
Manufacturer Infineon Technologies
Detailed Description POWER FIELD-EFFECT TRANSISTOR, 1
Package PG-TO220-3-1
In Stock 82401 pcs
Data sheet
Reference Price (In US Dollars)
201
$0.541
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 196µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO220-3-1
Series OptiMOS™ 3
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Power Dissipation (Max) 250W (Tc)
Package / Case TO-220-3
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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IPP024N06N3G Datasheet PDF

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