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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPN80R1K4P7
Infineon Technologies

IPN80R1K4P7

Manufacturer Part Number IPN80R1K4P7
Manufacturer Infineon Technologies
Detailed Description N-CHANNEL POWER MOSFET
Package PG-SOT223
In Stock 6617 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 70µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-SOT223
Series CoolMOS™
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max) 7W (Tc)
Package / Case TO-261-4, TO-261AA
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)

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IPN80R1K4P7 Datasheet PDF