IPN80R1K4P7
Manufacturer Part Number | IPN80R1K4P7 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | N-CHANNEL POWER MOSFET |
Package | PG-SOT223 |
In Stock | 6617 pcs |
Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 70µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-SOT223 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
Power Dissipation (Max) | 7W (Tc) |
Package / Case | TO-261-4, TO-261AA |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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