IPI65R190CFDXKSA1
Manufacturer Part Number | IPI65R190CFDXKSA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 650V 17.5A TO262-3 |
Package | PG-TO262-3 |
In Stock | 49680 pcs |
Data sheet | Part Number GuideMult Dev EOL 20/Feb/2022Mult Dev Wafer Site Add 20/Sep/2018 |
Reference Price (In US Dollars)
500 |
---|
$0.914 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.5V @ 730µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO262-3 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
Power Dissipation (Max) | 151W (Tc) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Package | Tube |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
Base Product Number | IPI65R190 |
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