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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPF042N10NF2SATMA1
Infineon Technologies

IPF042N10NF2SATMA1

Manufacturer Part Number IPF042N10NF2SATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET
Package PG-TO263-7
In Stock 61971 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100
$0.993 $0.893 $0.718
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.8V @ 93µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7
Series StrongIRFET™ 2
Rds On (Max) @ Id, Vgs 4.25mOhm @ 80A, 10V
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 139A (Tc)

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IPF042N10NF2SATMA1 Datasheet PDF

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