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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD80R2K8CEBTMA1
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IPD80R2K8CEBTMA1

Manufacturer Part Number IPD80R2K8CEBTMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 800V 1.9A TO252-3
Package PG-TO252-3-11
In Stock 6322 pcs
Data sheet Part Number GuideCover Tape Width Cancellation 14/Jul/2015Cover Tape Width Update 17/Jun/2015Halogen Part Status Rev 5/Aug/2016
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.9V @ 120µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3-11
Series CoolMOS™
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max) 42W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Base Product Number IPD80R

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IPD80R2K8CEBTMA1 Datasheet PDF

Data sheet