IPA65R660CFDXKSA1
Manufacturer Part Number | IPA65R660CFDXKSA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 650V 6A TO220 |
Package | PG-TO220-3-111 |
In Stock | 67514 pcs |
Data sheet | Part Number GuideMult Dev EOL 20/Feb/2022Mult Dev Wafer Site Add 20/Sep/2018 |
Reference Price (In US Dollars)
500 |
---|
$0.498 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO220-3-111 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
Power Dissipation (Max) | 27.8W (Tc) |
Package / Case | TO-220-3 Full Pack |
Package | Tube |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Base Product Number | IPA65R660 |
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