IPA60R190E6
Manufacturer Part Number | IPA60R190E6 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | 600V 0.19OHM N-CHANNEL MOSFET |
Package | PG-TO220-3-111 |
In Stock | 6826 pcs |
Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 630µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO220-3-111 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
Power Dissipation (Max) | 34W (Tc) |
Package / Case | TO-220-3 Full Pack |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
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