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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPA126N10N3G
Infineon Technologies

IPA126N10N3G

Manufacturer Part Number IPA126N10N3G
Manufacturer Infineon Technologies
Detailed Description 35A, 100V, 0.0126OHM, N-CHANNEL
Package PG-TO220-3-111
In Stock 5990 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 45µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO220-3-111
Series OptiMOS™3
Rds On (Max) @ Id, Vgs 12.6mOhm @ 35A, 10V
Power Dissipation (Max) 33W (Tc)
Package / Case TO-220-3 Full Pack
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)

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IPA126N10N3G Datasheet PDF